| US 7,429,446 B2 | ||
| Resist pattern forming method and semiconductor device fabrication method | ||
| Ken Sawada, Isehara (Japan); and Kozo Makiyama, Kawasaki (Japan) | ||
| Assigned to Fujitsu Limited, Kawasaki (Japan) | ||
| Filed on Mar. 19, 2004, as Appl. No. 10/804,179. | ||
| Claims priority of application No. 2003-339868 (JP), filed on Sep. 30, 2003. | ||
| Prior Publication US 2005/0069813 A1, Mar. 31, 2005 | ||
| Int. Cl. G03F 7/26 (2006.01) | ||
| U.S. Cl. 430—311 | 25 Claims |
| 1. A resist pattern forming method comprising the steps of:
forming on a substrate a photoresist film having an opening down to the substrate, a sidewall of the photoresist film in the
opening having hydrophilicity and affinity with a chemical liquid, and the hydrophilicity and affinity being increased upward;
and
reacting the chemical liquid for swelling the photoresist film with the photoresist film having the opening to swell the photoresist
film and to reverse-taper the sidewall of the photoresist film in the opening.
|