US 7,372,761 B2
Semiconductor device, nonvolatile semiconductor memory, system including a plurality of semiconductor devices or nonvolatile semiconductor memories, electric card including semiconductor device or nonvolatile semiconductor memory, and electric device with which this electric card can be used
Kazushige Kanda, Kanagawa (Japan); Koichi Kawai, Kanagawa (Japan); Hiroshi Nakamura, Kanagawa (Japan); and Kenichi Imamiya, Tokyo (Japan)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan)
Filed on Sep. 15, 2006, as Appl. No. 11/521,694.
Application 11/052558 is a division of application No. 10/322349, filed on Dec. 18, 2002, granted, now 6,870,786.
Application 11/521694 is a continuation of application No. 11/337999, filed on Jan. 24, 2006, granted, now 7,123,526.
Application 11/337999 is a continuation of application No. 11/052558, filed on Feb. 07, 2005, granted, now 7,016,241.
Claims priority of application No. 2001-386222 (JP), filed on Dec. 19, 2001.
Prior Publication US 2007/0008803 A1, Jan. 11, 2007
Int. Cl. G11C 7/00 (2006.01)
U.S. Cl. 365—226  [365/228] 17 Claims
OG exemplary drawing
 
1. A method of operating a nonvolatile semiconductor memory device comprising:
detecting a turn on of power;
outputting a busy status;
performing an initialization operation; and
terminating output of the busy status after the power level reaches a predetermined level.