| US 7,372,282 B2 | ||
| Method and apparatus for testing tunnel magnetoresistive effect element, manufacturing method of tunnel magnetoresistive effect element and tunnel magnetoresistive effect element | ||
| Nozomu Hachisuka, Tokyo (Japan); Hiroshi Kiyono, Tokyo (Japan); Takeo Kagami, Tokyo (Japan); Kenji Inage, Tokyo (Japan); and Norio Takahashi, Tokyo (Japan) | ||
| Assigned to TDK Corporation, Tokyo (Japan) | ||
| Filed on Mar. 13, 2006, as Appl. No. 11/276,753. | ||
| Claims priority of application No. 2005-088304 (JP), filed on Mar. 25, 2005. | ||
| Prior Publication US 2006/0216837 A1, Sep. 28, 2006 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. G01R 27/08 (2006.01); H01L 21/66 (2006.01) | ||
| U.S. Cl. 324—691 [324/719; 324/230; 438/14; 438/18] | 48 Claims |
| 1. A method for testing a tunnel magnetoresistive effect element comprising the steps of:
measuring a plurality of resistances of said tunnel magnetoresistive effect element by applying a plurality of discontinuous
voltages with different voltage values from each other to said tunnel magnetoresistive effect element, respectively;
calculating a ratio of change in resistance from the measured plurality of resistances of said tunnel magnetoresistive effect
element; and
evaluating said tunnel magnetoresistive effect element using the calculated ratio of change in resistance.
|