| US 7,372,113 B2 | ||
| Semiconductor device and method of manufacturing the same | ||
| Masayuki Tanaka, Yokohama (Japan); Yoshio Ozawa, Yokohama (Japan); Shigehiko Saida, Yokohama (Japan); Akira Goda, Yokohama (Japan); Mitsuhiro Noguchi, Yokohama (Japan); Yuichiro Mitani, Zushi (Japan); and Yoshitaka Tsunashima, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Jul. 01, 2004, as Appl. No. 10/880,508. | ||
| Application 10/880508 is a division of application No. 10/278882, filed on Oct. 24, 2002, granted, now 6,774,462. | ||
| Claims priority of application No. 2002-155740 (JP), filed on May 29, 2002. | ||
| Prior Publication US 2004/0251521 A1, Dec. 16, 2004 | ||
| Int. Cl. H01L 21/314 (2006.01) | ||
| U.S. Cl. 257—411 [257/640; 257/E21.212; 438/791] | 20 Claims |
| 1. A semiconductor device comprising:
a semiconductor substrate;
a gate electrode;
a first insulating film formed between the semiconductor substrate and the gate electrode; and
a second insulating film formed near the gate electrode and including a lower silicon nitride film containing nitrogen, silicon
and hydrogen and an upper silicon nitride film formed on the lower silicon nitride film and containing nitrogen, silicon,
and hydrogen,
wherein a concentration of hydrogen contained in the lower silicon nitride film is higher than a concentration of hydrogen
contained in the upper silicon nitride film, and
wherein a density of the lower silicon nitride film is lower than 2.68 g/cm3, and a density of the upper silicon nitride film is higher than 2.68 g/cm3.
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