| US 7,371,483 B2 | ||
| Method for manufacturing mask for focus monitoring, and method for manufacturing semiconductor device | ||
| Shingo Kanamitsu, Kawasaki (Japan); Takashi Hirano, Kawasaki (Japan); Kyoko Izuha, Yokohama (Japan); Soichi Inoue, Yokohama (Japan); and Shinichi Ito, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Apr. 23, 2004, as Appl. No. 10/830,399. | ||
| Claims priority of application No. 2003-122339 (JP), filed on Apr. 25, 2003. | ||
| Prior Publication US 2004/0265709 A1, Dec. 30, 2004 | ||
| Int. Cl. G03F 9/00 (2006.01) | ||
| U.S. Cl. 430—5 [430/296; 430/942] | 9 Claims |
| 1. A method for manufacturing a mask for focus monitoring, comprising:
forming a first opening portion and a second opening portion in a surface region of a transparent substrate, the second opening
portion having a pattern shape corresponding to a pattern shape of the first opening portion, and being surrounded by a stack
film formed of a halftone film on the transparent substrate and an opaque film on the halftone film; and
radiating a charged beam onto a first region which includes an edge of the second opening portion and inside and outside regions
which are respectively located inward and outward of the edge of the second opening portion, to etch that part of the transparent
substrate which corresponds to said inside region.
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