| US 7,371,282 B2 | ||
| Solid solution wide bandgap semiconductor materials | ||
| Narsingh Bahadur Singh, Ellicott City, Md. (US); Brian Wagner, Baltimore, Md. (US); Mike Aumer, Laurel, Md. (US); Darren Thomson, Ellicott City, Md. (US); David Kahler, Arbutus, Md. (US); Andre Berghmans, Owing Mills, Md. (US); and David J. Knuteson, Linthicum, Md. (US) | ||
| Assigned to Northrop Grumman Corporation, Los Angeles, Calif. (US) | ||
| Filed on Jul. 12, 2006, as Appl. No. 11/484,691. | ||
| Prior Publication US 2008/0011223 A1, Jan. 17, 2008 | ||
| Int. Cl. C30B 25/12 (2006.01); C30B 25/14 (2006.01) | ||
| U.S. Cl. 117—104 [117/68; 117/84; 117/89] | 17 Claims |
| 1. A method for producing a semiconductor crystal, comprising
depositing a semiconductor material on an alloy film by a vapor deposition method,
wherein the semiconductor material is selected from the group consisting of nitride, carbide and diamond, and wherein the
alloy is (AIN)x(SiC)(1-x) or SixGe(1-x)C, where 0<x<1.
|